3DD13003

Marking：13003；Package：SOT-89；High Voltage Fast Switching NPN Power Transistor

FEATURES ●PC=1W(Mountedonceramicsubstrate). ●Highspeedswitching. ●Diesize:1.34*1.34 ●Smallflatpackage. APPLICATIONS ●Mainlyusedforcompactelectronicenergysavinglamps, electronicballastandmobilephonechargers powerswitchcircuit

3DD13003

Marking：13003；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES powerswitchingapplications

NJ13003

Marking：13003；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistor

FEATURES PowerSwitchingApplications

13003SQ

Marking：13003；Package：SOT-89；NPN Transistor

BD13003B

Marking：13003；Package：TO-126；NPN Plastic-Encapsulated Transistor

3DD13003AS-R-T-B-A

Marking：13003AS；Package：TO-92-FJ；HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

FEATURES ●Highbreakdownvoltage ●Highcurrentcapability ●Highswitchingspeed ●Highreliability ●RoHSproduct APPLICATIONS ●Batterycharger ●Electronicballasts ●Highfrequencyswitchingpowersupply ●Highfrequencypowertransform ●Commonlypoweramplifier

3DD13003B

Marking：13003B；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES powerswitchingapplications

3DD13003B-TA

Marking：13003B；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES powerswitchingapplications

3DD13003N3

Marking：13003N3；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Powerswitchingapplications Goodhightemperature Lowsaturationvoltage Highspeedswitching

3DD13003N3D

Marking：13003N3D；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES Powerswitchingapplications Goodhightemperature Lowsaturationvoltage Highspeedswitching