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ISC130N20NM6

Marking：130N20N；Package：PG-TSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?MSL1classifiedacc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP130N20NM6

Marking：130N20N6；Package：PG-TO220-3；MOSFET OptiMOS? 6 Power?Transistor, 200 V

Features ?N?channel,normallevel ?Lowon?resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?175°Coperatingtemperature ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21 ?100%avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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