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Marking：35HF60WDI；Package：TO-247；35 A, 600 V ultrafast IGBT with low drop diode Description ThisultrafastIGBTisdevelopedusinganew planartechnologytoyieldadevicewithtighter switchingenergyvariation(Eoff)versus temperature.ThesuffixWdenotesasubsetof productsdesignedforhighswitchingfrequency operation(over100kHz). Features ■ImprovedEo | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
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