| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Marking：36NM60N；Package：D2PAK；Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh? II Power MOSFET in a D2PAK package Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
Marking：36NM60N；Package：TO-247；N-channel 600 V, 0.092 Ω, 29 A, MDmesh? II Power MOSFET in TO-247 Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications –Automotive Description Thisdeviceismadeusingthesecondgeneration ofMDmesh?technology.Thisrevolutionary PowerMOSFETassociatesanewve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
Marking：36NM60ND；Package：D2PAK；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
Marking：36NM60ND；Package：TO-247；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS |
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