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IPB70N10S3-12

Marking：3N1012；Package：PG-TO263-3-2；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI70N10S3-12

Marking：3N1012；Package：PG-TO262-3-1；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP70N10S3-12

Marking：3N1012；Package：PG-TO220-3-1；OptiMOS-T Power-Transistor

Features ?N-channel-Enhancementmode ?AutomotiveAECQ101qualified ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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