| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
5962R2220103VXC | Marking：5962R2220103VXC；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1Features ?RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi | TI1Texas Instruments 德州儀器美國德州儀器公司 | TI1 | |
5962R2220103VXC | Marking：5962R2220103VXC；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1Features ?RadiationPerformance: –Radiation-hardness-assurance(RHA)upto totalionizingdose(TID)of100krad(Si) –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergytransfer(LET) =75MeV-cm2/mg –Single-eventtransi | TI2Texas Instruments 德州儀器美國德州儀器公司 | TI2 |
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