74AUP1T04GW

Marking：5G；Package：SOT353-1；Low-power inverter with voltage-level translator

1.Generaldescription The74AUP1T04providesasingleinvertingfunction.Thisdeviceensuresaverylowstaticand dynamicpowerconsumptionacrosstheentireVCCrangefrom2.3Vto3.6V. The74AUP1T04isdesignedforlogic-leveltranslationapplicationswithinputswitchinglevelsthat ac

74AUP1T04GX

Marking：5G；Package：SOT1226-3；Low-power inverter with voltage-level translator

1.Generaldescription The74AUP1T04providesasingleinvertingfunction.Thisdeviceensuresaverylowstaticand dynamicpowerconsumptionacrosstheentireVCCrangefrom2.3Vto3.6V. The74AUP1T04isdesignedforlogic-leveltranslationapplicationswithinputswitchinglevelsthat ac

BC808-40

Marking：5G；Package：SOT-23；Small Signal Transistors (PNP)

Features ?PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. ?Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. ?Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. ?Asc

BUK6D210-60E

Marking：5G；Package：DFN2020MD-6；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?ExtendedtemperaturerangeTj=175°C ?Sidewettableflanksforo

BZX884S-C6V8

Marking：5G；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C6V8-Q

Marking：5G；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

NHDTA114YU

Marking：5G；Package：SOT323；80 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NHDTA114YU

Marking：5G；Package：SC-70；80 V, 100 mA PNP resistor-equipped transistors

1.Generaldescription PNPResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPNcomplement: NHDTA123JU2.247NHDTC123JU NHDTA143ZU4.747NHDTC143

PBSS306NX

Marking：5G；Package：SC-62；100 V, 4.5 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PEMB16

Marking：5G；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecost