BZX584C20V

Marking：5N；Package：SOD523；Zener Diode

Features ●Highreliability ●Verysharpreversecharacteristic ●Lowreversecurrentlevel ●ZenerVoltage2.4V~47V

BZX8850S-C1V8

Marking：5N；Package：DFN1006BD-2；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Totalpowerdissipation:≤365mW ?Toleranceseries:approximately±5 ?Workin

BZX8850S-C1V8-Q

Marking：5N；Package：DFN1006BD-2；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Totalpowerdissipation:≤365mW ?Toleranceseries:approximately±5 ?Workin

D22V0S1U3LP20-7

Marking：5N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?OneChannelofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplications

MM1Z24

Marking：5N；Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.500mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

MM1Z24

Marking：5N；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features ?Totalpowerdissipation:max.500mW ?Smallplasticpackagesuitableforsurfacemounteddesign ?Toleranceapproximately±5

NHDTC114YU

Marking：5N；Package：SC-70；80 V, 100 mA NPN resistor-equipped transistors

1.Generaldescription NPNResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNPcomplement: NHDTC123JU2.247NHDTA123JU NHDTC143ZU4.747NHDTA143

NHDTC114YU-Q

Marking：5N；Package：SC-70；80 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NXV90EP

Marking：5N；Package：SOT23；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?Veryfastswitching ?TrenchMOSFETtechnology 3.Applications ?

PBSS306PX

Marking：5N；Package：SC-62；100 V, 3.7 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors