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IAUTN12S5N018G

Marking：5N12N018；Package：PG-HSOG-8-1；OptiMOS? 5 Power-Transistor

Potentialapplications Generalautomotiveapplications. Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUTN12S5N018T

Marking：5N12N018；Package：PG-HDSOP-16-1；OptiMOS? 5 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%avalan

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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