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Marking：62P3LLH6；Package：PowerFLAT；P-channel -30 V, 9 m廓 typ., -62 A STripFET??H6 Power MOSFET in a PowerFLAT 5x6 package Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET?H6technology, withanewtrenchgatestructure.Theresulting PowerMOSFETexhibitsverylowRDS(on)inall packages Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ? | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
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