| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：65C6600；Package：PG-TO262；650V CoolMOS C6 Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65C6600；Package：PG-TO220FullPAK；650V CoolMOS C6 Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65C6600；Package：PG-TO263；650V CoolMOS C6 Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65C6600；Package：PG-TO252；650V CoolMOS C6 Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：65C6600；Package：PG-TO220；650V CoolMOS C6 Power Transistor Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhighcommutationruggedness ?Easyto | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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