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IPA65R110CFD

Marking:65F6110;Package:PG-TO220FullPAK;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB65R110CFD

Marking:65F6110;Package:PG-TO263;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R110CFD

Marking:65F6110;Package:PG-TO262;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R110CFD

Marking:65F6110;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R110CFD

Marking:65F6110;Package:PG-TO247;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?Ultra-fastbodydiode ?Veryhighcommutationruggedness ?ExtremelylowlossesduetoverylowFOMRdso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB655R110CFDA

Marking:65F6110A;Package:PG-TO263; 650V CoolMos CFDA Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP655R110CFDA

Marking:65F6110A;Package:PG-TO220; 650V CoolMos CFDA Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW655R110CFDA

Marking:65F6110A;Package:PG-TO247; 650V CoolMos CFDA Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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