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IPA65R150CFD

Marking:65F6150;Package:PG-TO220FullPAK;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS?MCFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Th

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB65R150CFD

Marking:65F6150;Package:PG-TO263;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS?MCFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Th

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI65R150CFD

Marking:65F6150;Package:PG-TO262;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS?MCFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Th

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP65R150CFD

Marking:65F6150;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS?MCFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Th

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R150CFD

Marking:65F6150;Package:PG-TO247;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS?MCFD2series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation.Th

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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