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IMT65R163M1H

Marking:65R163M1;Package:PG-HSOF-8;MOSFET 650 V CoolSiCa M1 SiC Trench Power Device

Features ?Optimizedswitchingbehaviorathighercurrents ?CommutationrobustfastbodydiodewithlowQf ?Superiorgateoxidereliability ?Tj,max=175°Candexcellentthermalbehavior ?LowerRDS(on)andpulsecurrentdependencyontemperature ?Increasedavalanchecapability ?Compatib

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IMBG65R163M1H

Marking:65R163M1;Package:PG-TO263-7-12;650 V CoolSiC? M1 SiC Trench Power Device

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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