BZX84-A15

Marking：69；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

BQ296900DSGR

Marking：6900；Package：WSON；BQ2969 Overvoltage Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with Regulated Output Supply

1Features ?2-series,3-series,and4-series cellovervoltageprotection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Outputpinoptions: –Activehigh –Open-drain-activepulldown

BQ296900TDSGR

Marking：690T；Package：WSON；BQ2969T Overvoltage and Overtemperature Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with LDO Output and Control / PTC Input

1Features ?2-series,3-series,and4-seriescellovervoltage protection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Controlinputpin,whichcanimplementcell overtemperatureprotec

BQ296907DSGR

Marking：6907；Package：WSON；BQ2969 Overvoltage Protection for 2-Series, 3-Series, and 4-Series Cell Li-Ion Batteries with Regulated Output Supply

1Features ?2-series,3-series,and4-series cellovervoltageprotection(OVP) ?FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy ?FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) ?Outputpinoptions: –Activehigh –Open-drain-activepulldown

FDS6910-TP

Marking：6910；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES| RosOM=16mO@VES=10v ?Ros=20MO@VGS=4.5V| ?SuperhighdensitycelldesignforextremelylowRoSON| ?Exceptionalon-resistanceandmaximumDCcurent cy|

FDS6975-TP

Marking：6975；Package：SOP-8；Dual P-ChannelEnhancement Mode Power MOSFET

Application ?DC-DCConverters. *LoadSwitch. *PowerManagement.

OPA695IDGKR

Marking：695；Package：VSSOP；OPA695 Ultra-Wideband, Current-Feedback Operational Amplifier With Disable

1Features ?Widebandwidth: –1900MHz(G=+1V/V) –600MHz(G=+8V/V) ?Large-signalbandwidth(2VPP):540MHz ?Outputvoltageswing:±4.05V ?Ultra-highslewrate:5000V/μs ?Inputvoltagenoise:2nV/√Hz ?Lowdistortion(RL=100Ω,VO=2VPP): –HD2,HD3at10MHz:–65dBc,–92dBc ?Hi

OPA695IDGKT

Marking：695；Package：VSSOP；OPA695 Ultra-Wideband, Current-Feedback Operational Amplifier With Disable

1Features ?Widebandwidth: –1900MHz(G=+1V/V) –600MHz(G=+8V/V) ?Large-signalbandwidth(2VPP):540MHz ?Outputvoltageswing:±4.05V ?Ultra-highslewrate:5000V/μs ?Inputvoltagenoise:2nV/√Hz ?Lowdistortion(RL=100Ω,VO=2VPP): –HD2,HD3at10MHz:–65dBc,–92dBc ?Hi

TLC69600QPWPRQ1

Marking：69600Q；Package：HTSSOP；TLC696x0-Q1 Automotive Scan MOSFET Controller for TLC696x2/4/8-Q1

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:–40°Cto+125°C, TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?FunctionalSafety-Capable: –Documentationavailabletoaidfunctionalsafety systemdesign ?

TLC69600QRTWRQ1

Marking：69600Q；Package：WQFN；TLC696x0-Q1 Automotive Scan MOSFET Controller for TLC696x2/4/8-Q1

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:–40°Cto+125°C, TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B ?FunctionalSafety-Capable: –Documentationavailabletoaidfunctionalsafety systemdesign ?