BUK6D30-40E

Marking：6K；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?ExtendedtemperaturerangeTj=175°C ?Sidewettableflanksforo

D20V0S1U2LP20-7

Marking：6K；Package：U-DFN2020-2；1 CHANNEL HIGH SURGE TVS DIODE

Features ?ProvidesESDProtectionperIEC61000-4-2Standard:Air±30kV,Contact±30kV ?OneChannelsofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) Applications ?CellularHa

DTA606

Marking：6K；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LDTA143ZET1G

Marking：6K；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LDTA143ZET1G

Marking：6K；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

NHUMH13

Marking：6K；Package：C-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NHUMH13

Marking：6K；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistors(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNP/PNP complement: NPN/PNP complement: NHUMH102.247NH

NHUMH13-Q

Marking：6K；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

PEMH20

Marking：6K；Package：SOT666；NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.1Generaldescription NPN/NPNresistor-equippedtransistors. 1.2Features Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts 1.3Applications Lowcurrentperipheraldriver ControlofICinputs Replacesgeneral-purposetransisto

PESD2CANFD36VU-Q

Marking：6K；Package：SC-70；ESD protection for in-vehicle networks

1.Generaldescription ESDprotectiondeviceinasmallSOT323Surface-MountedDevice(SMD)plasticpackage, designedtoprotecttwoautomotivein-vehiclenetworkbuslinesfromthedamagecausedby ElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbenefits ?Reversestand