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IPI60R099CP

Marking:6R099P;Package:PG-TO262;High peak current capability

Features ?WorldwidebestRds,oninTO220 ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R099P6

Marking:6R099P6;Package:PG-TO220FullPAK;600V CoolMOS??P6 Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R099P6

Marking:6R099P6;Package:PG-TO220;600V CoolMOS??P6 Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW60R099P6

Marking:6R099P6;Package:PG-TO247;600V CoolMOS??P6 Power Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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