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IPA60R380C6

Marking:6R380C6;Package:PG-TO220;MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtermelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcommutationruggedness *Easytouse/drive,Pb-freeplating,Halogenfree *FullyqualifiedaccordingtoJEDECforIndustrialApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R380C6

Marking:6R380C6;Package:PG-TO263;MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtermelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcommutationruggedness *Easytouse/drive,Pb-freeplating,Halogenfree *FullyqualifiedaccordingtoJEDECforIndustrialApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI60R380C6

Marking:6R380C6;Package:PG-TO262;MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtermelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcommutationruggedness *Easytouse/drive,Pb-freeplating,Halogenfree *FullyqualifiedaccordingtoJEDECforIndustrialApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R380C6

Marking:6R380C6;Package:PG-TO220;MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtermelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcommutationruggedness *Easytouse/drive,Pb-freeplating,Halogenfree *FullyqualifiedaccordingtoJEDECforIndustrialApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX60R380C6

Marking:6R380C6;Package:PG-TO252;MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtermelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcommutationruggedness *Easytouse/drive,Pb-freeplating,Halogenfree *FullyqualifiedaccordingtoJEDECforIndustrialApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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