| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：70H120G3；Package：HPAK-7；Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H2PAK-7 package Features ?Veryfastandrobustintrinsicbodydiode ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Sourcesensingpinforincreasedefficiency Applications ?Switchingmodepowersupply ?Powersupplyforrenewableenergysystems ?DC-DCconve | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：70H120G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H2PAK-7 package Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
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