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D7V5S1U3LP20-7

Marking:75N;Package:U-DFN2020-3;1 CHANNEL HIGH SURGE TVS DIODE

Features ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?OneChannelofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplications

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

PJP75N06SA-AU

Marking:75N06SA;Package:TO-220AB-L;60V N-Channel Enhancement Mode MOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

RM75N60ALD

Marking:75N60;Package:TO-252-2L;N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=75A RDS(ON)

RECTRON

Rectron Semiconductor

RM75N60LD

Marking:75N60;Package:TO-252-2L;N-Channel Enhancement Mode Power MOSFET

GeneralFeatures VDS=60V,ID=75A RDS(ON)

RECTRON

Rectron Semiconductor

RM75N60T2

Marking:75N60;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

GeneralFeatures Vds=60V,Id=75A. Rds(on)

RECTRON

Rectron Semiconductor

STB75NF20

Marking:75NF20;Package:D2PAK;N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET?processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters ■Exceptionaldv/dt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP75NF20

Marking:75NF20;Package:TO-220;N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET?processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters ■Exceptionaldv/dt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW75N60M6

Marking:75N60M6;Package:TO-247;N-channel 600 V, 32 mΩ typ., 72 A, MDmesh? M6 Power MOSFET in a TO?247 package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?LLCconverters ?BoostPFCconverters Description ThenewMDmesh?M6technologyincorporat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW75N60M6-4

Marking:75N60M6;Package:TO247-4;N-channel 600 V, 32 mΩ typ., 72 A, MDmesh? M6 Power MOSFET in a TO247-4 package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected ?Excellentswitchingperformancethankstotheextradrivingsourcepin Applications ?Switchingapplications ?LLCconverters ?Boo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW75NF20

Marking:75NF20;Package:TO-247;N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET?processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters ■Exceptionaldv/dt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    75N

  • 制造商:

    TYSEMI

  • 制造商全稱:

    TY Semiconductor Co., Ltd

  • 功能描述:

    VDS=75V,RDS(on)=0.009 VGS=10V,ID=30A VDS=75V,RDS(on)=0.011VGS=4.5V,ID=20A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT
24+
BGA
630
詢價(jià)
UTC
24+/25+
TO-220F
12
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
詢價(jià)
ST
23+
TO-220
9526
詢價(jià)
ST
23+
TO-220
5000
原裝正品,假一罰十
詢價(jià)
-
24+
BGA
1068
原裝現(xiàn)貨假一罰十
詢價(jià)
12+
TO-263
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
ST
16+
TO220
400
全新原裝現(xiàn)貨
詢價(jià)
ST
24+
TO-220
3500
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
IDT
24+
DIP-8
25843
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!
詢價(jià)
仙童/哈里斯/英飛凌
23+
TO-220
3000
全新原裝
詢價(jià)
更多75N供應(yīng)商 更新時(shí)間2025-7-6 16:30:00