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IAUAN04S7N005

Marking：7N04N005；Package：PG-HSOF-5-1；Automotive MOSFET OptiMOSTM 7 Power-Transistor

Features ?OptiMOSTMpowerMOSFETforautomotiveapplications ?N-channel-Enhancementmode-NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL2aupto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100Avalanche

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUCN04S7N005

Marking：7N04N005；Package：PG-TDSON-8-43；OptiMOS? 7 Power-Transistor

Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100Avalanchet

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IAUMN04S7N005G

Marking：7N04N005；Package：PG-HSOG-4-1；OptiMOSTM 7 Power-Transistor

Features ?OptiMOSTMpowerMOSFETforautomotiveapplications ?N-channel-Enhancementmode-NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL2upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avala

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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