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IPA80R1K4P7

Marking:80R1K4P7;Package:PG-TO220FullPAK;800V CoolMOS? P7 Power Transistor

Features ?Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss ?Best-in-classDPAKRDS(on) ?Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V ?IntegratedZenerDiodeESDprotection ?Best-in-classCoolMOS?qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20a

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPLK80R1K4P7

Marking:80R1K4P7;Package:ThinPAK5x6SMD;800V CoolMOS? P7 Power Device

MOSFET 800VCoolMOSaP7PowerDevice Thelatest800VCoolMOS?P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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