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IPN80R900P7

Marking:80R900;Package:PG-SOT223;800V CoolMOS? P7 Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPLK80R900P7

Marking:80R900P7;Package:SMD;800V CoolMOSa P7 Power Device

Features ?Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss ?Best-in-classDPAKRDS(on) ?Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V ?IntegratedZenerDiodeESDprotection ?Fullyoptimizedportfolio

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MMD80R900QZRH

Marking:80R900QZ;Package:TO-252-2L;800V 0.90? N-channel MOSFET

?Description MMD80R900QZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIto

MGCHIP

MagnaChip Semiconductor.

IPA80R900P7

Marking:80R900P7;Package:PG-TO220FullPAK;800V CoolMOS? P7 Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD80R900P7

Marking:80R900P7;Package:PG-TO252-3;800V CoolMOS? P7 Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP80R900P7

Marking:80R900P7;Package:PG-TO220-3;800V CoolMOS? P7 Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPS80R900P7

Marking:80R900P7;Package:PG-TO251-3;800V CoolMOS? P7 Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPU80R900P7

Marking:80R900P7;Package:PG-TO251-3;800V CoolMOS? P7 Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MMF80R900PBTH

Marking:80R900PB;Package:TO-220F;800V 0.9ohm N-channel MOSFET

MGCHIP

MagnaChip Semiconductor.

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