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BCP56-16-AU_R2_000A1

Marking：8110DW；Package：SOT-223；NPN Low Vce(sat) Transistor

Features ?SiliconNPNepitaxialtype ?LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA ?Highcollectorcurrentcapability ?ExcellentDCcurrentgaincharacteristics ?AEC-Q101qualified ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249Standard ?PNPcomple

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PBHV8110DW_R2_00001

Marking：8110DW；Package：SOT-223；NPN Low Vce(sat) Transistor

Features ?SiliconNPNepitaxialtype ?LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA ?Highcollectorcurrentcapability ?ExcellentDCcurrentgaincharacteristics ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249Standard ?PNPcomplement:PBHV9110DW

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PBHV8110DW-AU_R2_000A1

Marking：8110DW；Package：SOT-223；NPN Low Vce(sat) Transistor

Features ?SiliconNPNepitaxialtype ?LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA ?Highcollectorcurrentcapability ?ExcellentDCcurrentgaincharacteristics ?AEC-Q101qualified ?LeadfreeincompliancewithEURoHS2.0 ?GreenmoldingcompoundasperIEC61249Standard ?PNPcomple

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

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