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BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL128

HighVoltageFast-SwitchingNPNPowerTransistor

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

SUNTAC

Suntac Electronic Corp.

BUL128

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesign

TGS

Tiger Electronic Co.,Ltd

BUL128

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitchmodepowersupplies.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL128D

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Integratedantiparallelcollector-emitterdiode APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL128D

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisd

TGS

Tiger Electronic Co.,Ltd

BUL128D

SiliconNPNPowerTransistor

EATURES ·Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ·VeryHighSwitchingSpeed DESCRIPTION ·Designedforuseinlightingapplicationsandlowcost switch-modepowersupplies.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL128DB

iscSiliconNPNPowerTransistor

DESCRIPTION ?Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) ?LowCollectorSaturationVoltage :VCE(sat)=0.7V(Max)@IC=0.5A ?VeryHighSwitchingSpeed APPLICATIONS ?Designedforelectronicballastsforfluorescentlighting.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL128D-B

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL128D-B

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    ATMEGA128A-AUR

  • 功能描述：

    8位微控制器 -MCU AVR 128K FLSH-16MHz IND TEMP 5V

  • RoHS：

    否

  • 制造商：

    Silicon Labs

  • 核心：

    8051

  • 處理器系列：

    C8051F39x

  • 數(shù)據(jù)總線寬度：

    8 bit

  • 最大時鐘頻率：

    50 MHz

  • 程序存儲器大?。?/span>

    16 KB 數(shù)據(jù) RAM

  • 大小：

    1 KB 片上

  • ADC：

    Yes

  • 工作電源電壓：

    1.8 V to 3.6 V

  • 工作溫度范圍：

    - 40 C to + 105 C

  • 封裝/箱體：

    QFN-20

  • 安裝風(fēng)格：

    SMD/SMT

供應(yīng)商型號品牌批號封裝庫存備注價格
MICROCHIP(美國微芯)
24+
TQFP-64
4000
只做原裝正品，實(shí)單可談
 詢價
Microchip(微芯)
23+
TQFP64
25900
新到現(xiàn)貨,只有原裝
 詢價
microchip
25+
TQFP64
28
公司只售原裝 支持實(shí)單
 詢價
Microchip
23+
TQFP-64
30000
全新原裝正品
 詢價
Microchip(微芯)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
Microchip(微芯)
25+
5000
只做原裝 假一罰百 可開票 可售樣
 詢價
Microchip(微芯)
21+
原廠原封
9000
保證原裝正品 深圳現(xiàn)貨
 詢價
MICROCHIP
24+
TQFP64
14000
原廠授權(quán)代理 價格絕對優(yōu)勢
 詢價
Microchip
25+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
ATMEL/愛特梅爾
23+
QFP
98900
原廠原裝正品現(xiàn)貨!!
 詢價
更多ATMEGA128A-AUR供應(yīng)商 更新時間2025-7-28 16:36:00

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