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UPD5740T6N-E2

Marking:C3U;Package:TSON;SiGe BiCMOS INTEGRATED CIRCUIT

FEATURES ?Lowvoltageoperation:VCC=2.3to3.3V(2.8VTYP.) ?Lowmodecontrolvoltage:Vcont(H)=1.0VtoVCC,Vcont(L)=0to0.5V ?Lowcurrentconsumption:ICC1=5.0mATYP.@VCC=2.8V(LNA-mode) :ICC2=1μAMAX.@VCC=2.8V(Bypass-mode) ?Lownoise(LNA-mode):NF1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPD5740T6N-E2-A

Marking:C3U;Package:TSON;SiGe BiCMOS INTEGRATED CIRCUIT

FEATURES ?Lowvoltageoperation:VCC=2.3to3.3V(2.8VTYP.) ?Lowmodecontrolvoltage:Vcont(H)=1.0VtoVCC,Vcont(L)=0to0.5V ?Lowcurrentconsumption:ICC1=5.0mATYP.@VCC=2.8V(LNA-mode) :ICC2=1μAMAX.@VCC=2.8V(Bypass-mode) ?Lownoise(LNA-mode):NF1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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