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EMD30

Marking：D30；Package：EMT6；General purpose transistor (isolated transistors)

DTB713ZandDTC114EAarehousedindependentlyinaEMT6package. Features 1)DTr1:PNPdigitaltransistor DTr2:NPNdigitaltransistor 2)MountingpossiblewithEMT3automaticmountingmachines. Applications DC/DCconverter Motordriver

ROHMRohm

羅姆羅姆半導體集團

EMD30

Marking：D30；Package：EMT6；General purpose transistor (isolated transistors)

ROHMRohm

羅姆羅姆半導體集團

EMD30

Marking：D30；Package：EMT6；General purpose transistor (isolated transistors)

ROHMRohm

羅姆羅姆半導體集團

TZT43AW

Marking：D30；Package：SOT-23；SMD Zener

TAITRON

TAITRON Components Incorporated

CBTD3306PW

Marking：D306；Package：SOT530-1；Dual bus switch with level shifting

1.Generaldescription TheCBTD3306dualFETbusswitchfeaturesindependentlineswitches.Eachswitchisdisabled whentheassociatedoutputenable(nOE)inputisHIGH. TheCBTD3306ischaracterizedforoperationfrom-40°Cto+85°C. 2.Featuresandbenefits ?Designedtobeusedin5Vt

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

FKD3018B

Marking：D3018B；Package：TO252；N-Ch 30V Fast Switching MOSFETs

Description TheFKD3018Bisthehighcelldensitytrenched N-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronous buckconverterapplications. TheFKD3018BmeettheRoHSandGreen Productrequirement,100EASguaranteed withfullfunctionreliabilityapprove

FETEKFETek Technology Corp.

臺灣東沅東沅科技股份有限公司

IDW30G65C5

Marking：D3065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1Description ThinQ!?Generation5representsInfineonleadingedgetechnologyforthe SiCSchottkyBarrierdiodes.Thankstothemorecompactdesignandthinwafer technology,thenewfamilyofproductsshowsimprovedefficiencyover allloadconditions,resultingfromboththeimprovedtherma

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDWD30G120C5

Marking：D3012C5；Package：PG-TO247-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features ?Noreverserecoverycurrent/noforwardrecovery ?Highsurgecurrentcapability ?Temperatureindependentswitchingbehaviour ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Specifieddv/dtruggedness ?Pb-freeleadplating;RoHS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PJD30N04S-AU

Marking：D30N04S；Package：TO-252AA；40V N-Channel Enhancement Mode MOSFET

Features ?RDS(ON),VGS@10V,ID@20A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJD30N15_L2_00001

Marking：D30N15；Package：TO-252AA；150V N-Channel Enhancement Mode MOSFET

Features ?RDS(ON),VGS@10V,ID@5A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

詳細參數(shù)

  • 型號：

    D30

  • 制造商：

    Dagnall Electronics

  • 功能描述：

    TRANSFORMER 3VA 2 X 6V

供應(yīng)商型號品牌批號封裝庫存備注價格
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13+
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680
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
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日本新電元
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17+
TO220F-2
6200
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NEC
05+
原廠原裝
4326
只做全新原裝真實現(xiàn)貨供應(yīng)
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NEC
23+
鋼BGA
2870
絕對全新原裝!現(xiàn)貨!特價!請放心訂購!
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NEC
24+/25+
98
原裝正品現(xiàn)貨庫存價優(yōu)
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ST
23+
DIP-28
5000
原裝正品,假一罰十
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NEC
24+
QFP
3500
原裝現(xiàn)貨,可開13%稅票
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更多D30供應(yīng)商 更新時間2025-7-8 16:30:00

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