| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：DS120005D3；Package：TO-252-2L；3 Generation 1200V/ 5 A SiC Schottky Barrier Diode AECQ101qualified RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScomp | SANANSanan Optoelectronics Co., Ltd 三安光電三安光電股份有限公司 | SANAN | ||
Marking：DS120005D3；Package：TO-252-2L；3rd Generation 1200V/5A SiC Schottky Barrier Diode RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant | SANANSanan Optoelectronics Co., Ltd 三安光電三安光電股份有限公司 | SANAN |
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