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NDSH20120C-F155

Marking:DSH20120C;Package:TO-247-2LD;Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDSH20120CDN

Marking:DSH20120CDN;Package:TO-247-3LD;Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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