首頁(yè) >EL352(C)TA-G>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
CoiltypeEMIFilters(DigitalNoiseFilters) | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
CoiltypeEMIFilters | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
P-Channel30V(D-S)MOSFET Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability. | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
P-Channel30V(D-S)MOSFET GeneralDescription Thesedevicesarewellsuitedforlowvoltageandbatterypowered applicationswherelowin-linepowerlossisneededina verysmalloutlinesurfacemountpackage. Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■High | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
SingleP-Channel,PowerTrench GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductoradvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ■–1.3A,–30 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
SingleP-Channel,PowerTrenchMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
P-ChannelMOSFET ■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
P-Channel30V(D-S)MOSFET Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability. | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW | ||
P-Channel30V(D-S)MOSFET GeneralDescription Thesedevicesarewellsuitedforlowvoltageandbatterypowered applicationswherelowin-linepowerlossisneededina verysmalloutlinesurfacemountpackage. Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■High | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
P-ChannelMOSFET ■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN |
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