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RFP30N06LE

Marking:F30N06LE;Package:TO-220AB;30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs

Description TheRFP30N06LE,RF1S30N06LEandRF1S30N06LESMareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theywere

HARRIS

Harris Corporation

RFP30N06LE

Marking:F30N06LE;Package:TO-220AB;30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

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