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STGW60H65DFB-4

Marking:G60H65DFB;Package:TO247-4;Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Features ?Maximumjunctiontemperature:TJ=175°C ?Excellentswitchingperformancethankstotheextradrivingkelvinpin ?LowVCE(sat)=1.6V(typ.)@IC=60A ?Minimizedtailcurrent ?Tightparameterdistribution ?Safeparalleling ?Lowthermalresistance ?Veryfastsoftrecov

STMICROELECTRONICSSTMicroelectronics

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STGWA60H65DFB

Marking:G60H65DFB;Package:TO-247;Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter.

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