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STGB7NC60HD-1

Marking:GB7NC60HD;Package:I2PAK_TO-262;N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB7NC60HDT4

Marking:GB7NC60HD;Package:D2PAK_TO-263;N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode

Description ThesedevicesareveryfastIGBTdeveloped usingadvancedPowerMESH?technology.This processguaranteesanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thesedevicesarewell-suitedfor resonantorsoft-switchingapplications. Features ■Lowo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB7NC60HDT4

Marking:GB7NC60HD;Package:D2PAK;N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT

GeneralFeatures ■LOWERON-VOLTAGEDROP(Vcesat) ■OFFLOSSESINCLUDETAILCURRENT ■LOSSESINCLUDEDIODERECOVERY ENERGY ■LOWERCRES/CIESRATIO ■HIGHFREQUENCYOPERATIONUPTO70 KHz ■VERYSOFTULTRAFASTRECOVERYANTI PARALLELDIODE ■NEWGENERATIONPRODUCTSWITH TIGHTERPARAMETER

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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