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BAT64-13-F

Marking:K65;Package:SOT23;SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ?LowTurn-onVoltage ?FastSwitching ?PNJunctionGuardRingforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

美臺半導(dǎo)體

BAT64-7-F

Marking:K65;Package:SOT23;SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ?LowTurn-onVoltage ?FastSwitching ?PNJunctionGuardRingforTransientProtection ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

美臺半導(dǎo)體

XPH2R106NC

Marking:K65;Package:SOPAdvance(WF);MOSFETs Silicon N-channel MOS

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK650A60F

Marking:K650A60F;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)EasytocontrolGateswitching (2)Lowdrain-sourceon-resistance:RDS(ON)=0.54Ω(typ.) (3)Enhancementmode:Vth=2to4V(VDS=10V,ID=1.16mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

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