BAS70W-05

Marking：K75；Package：SOT-323；Surface Mount Schottky Barrier Diode

BAS70WT-05Q

Marking：K75；Package：SOT-323；Small Signal Schottky Diode

IKQ75N120CH7

Marking：K75MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP? IGBT 7 Technology

Highspeed1200VTRENCHSTOP?IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features ?VCE=1200V ?IC=75A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedw

IKW75N120CH7

Marking：K75MCH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP? IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features ?VCE=1200V ?IC=75A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedwithfullratedcurrent,lowQrrandsoft-commutating highspeeddiode ?LowsaturationvoltageVCEsat=1.7VatTvj=25°C ?Optimizedforhighefficiencyinhighsp

IKW75N60T

Marking：K75T60；Package：PG-TO-247-3-21；Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

LowLossDuoPack:IGBTinTRENCHSTOP?andFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmitterControlledHEdiode ●VerylowVCE(sat)1.5V(typ.) ●MaximumJunctionTemperature175°C ●Shortcircuitwithstandtime5?s ●PositivetemperaturecoefficientinVCE(sat) ●verytigh

IKW75N65RH5

Marking：K75ERH5；Package：PG-TO247-3；CoolSiC? Hybrid Discrete - TRENCHSTOP? 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC? diode

Features ?VCE=650V ?IC=75A ?Ultra-lowswitchinglossesduetothecombinationofTRENCHSTOPTM5andCoolSiCTM technology ?Benchmarkefficiencyinhardswitchingtopologies ?Plug-and-playreplacementofpuresilicondevices ?MaximumjunctiontemperatureTvjmax=175°C ?Qualifie

IKWH75N65EH7

Marking：K75EEH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=75A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprodu

IKY75N120CH7

Marking：K75MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP? IGBT 7 Technology

Highspeed1200VTRENCHSTOP?IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features ?VCE=1200V ?IC=75A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedw

IKZA75N120CH7

Marking：K75MCH7；Package：PG-TO247-4-STD-NT3.7；High speed 1200 V TRENCHSTOP? IGBT 7 Technology

Highspeed1200VTRENCHSTOP?IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features ?VCE=1200V ?IC=75A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedw

IKZA75N65EH7

Marking：K75EEH7；Package：PG-TO247-4-STD-NT3.7；High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=75A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprodu