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KMB2D0N60SA

Marking:KND;Package:SOT-23;N-Ch Trench MOSFET

ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristiscs.ItismainlysuitableforportableforportableequipmentandSMPS.

KECKEC CORPORATION

KEC株式會(huì)社

SSM6K403TU

Marking:KND;Package:UF6;MOSFETs Silicon N-Channel MOS

1.Applications ?PowerManagementSwitches ?High-SpeedSwitching 2.Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=66mΩ(max)(@VGS=1.5V) RDS(ON)=43mΩ(max)(@VGS=1.8V) RDS(ON)=32mΩ(max)(@VGS=2.5V) RDS(ON)=28mΩ(max)(@VGS=4.0V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

KMB2D0N60SA

Marking:KND;Package:SOT-23;N-Ch Trench MOSFET

KECKEC CORPORATION

KEC株式會(huì)社

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