| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：LED625；Package：I2PAKFP(TO-281)；N-channel 620 V, 1.28 廓 typ., 5.0 A Power MOSFET in I2PAKFP and TO-220 packages | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：LED625；Package：TO-220；N-channel 620 V, 1.28 廓 typ., 5.0 A Power MOSFET in I2PAKFP and TO-220 packages | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：LED625H；Package：TO-281；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages Features ?100avalanchetested ?Extremelyhighdv/dtcapability ?Gatechargeminimized ?Verylowintrinsiccapacitance ?Improveddiodereverserecovery characteristics ?Zener-protected Applications ?LEDlightingapplications Description ThesePowerMOSFETsboastextremelylow | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：LED625H；Package：TO-220；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages Features ?100avalanchetested ?Extremelyhighdv/dtcapability ?Gatechargeminimized ?Verylowintrinsiccapacitance ?Improveddiodereverserecovery characteristics ?Zener-protected Applications ?LEDlightingapplications Description ThesePowerMOSFETsboastextremelylow | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Marking：LED625H；Package：IPAK；N-channel 650 V, 1.7 Ω typ., 4.5 A Power MOSFET in I2PAKFP, TO-220 and IPAK packages Features ?100avalanchetested ?Extremelyhighdv/dtcapability ?Gatechargeminimized ?Verylowintrinsiccapacitance ?Improveddiodereverserecovery characteristics ?Zener-protected Applications ?LEDlightingapplications Description ThesePowerMOSFETsboastextremelylow | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
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