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LGD8209TI

Marking:LGD8209G;Package:DPAK;410 V, 12 A N-Channel Ignition IGBT

Description ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver-Voltageclampedprotectionforuseininductivecoildriversapplications.Primaryusesincludemotorbikeignition,DirectFuelInjection,orwhereverhighvoltageandhigh

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