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LM2105DR

Marking:LM2105;Package:SOIC;LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國德州儀器公司

LM2105DR

Marking:LM2105;Package:SOIC;LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州儀器美國德州儀器公司

PLM2105DR

Marking:LM2105;Package:SOIC;LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國德州儀器公司

PLM2105DSGR

Marking:LM2105;Package:WSON;LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國德州儀器公司

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