訂購數量 | 價格 |
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1+ |
首頁>MJD45H11RLG>芯片詳情
MJD45H11RLG_ONSEMI/安森美半導體_兩極晶體管 - BJT 8A 80V 20W PNP力仕科電子
- 詳細信息
- 規(guī)格書下載
產品屬性
- 類型
描述
- 型號:
MJD45H11RLG
- 功能描述:
兩極晶體管 - BJT 8A 80V 20W PNP
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
供應商
- 企業(yè):
深圳市力仕科電子科技有限公司
- 商鋪:
- 聯系人:
鄭生
- 手機:
15798481517
- 詢價:
- 電話:
15798481517
- 地址:
深圳市福田區(qū)華強北街道福強社區(qū)深南中路2070號電子科技大廈A座36樓A11
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