訂購數(shù)量 | 價(jià)格 |
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1+ |
首頁>SISS27DN-T1-GE3>芯片詳情
SISS27DN-T1-GE3_VISHAY/威世科技_MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III長旗科技
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
SISS27DN-T1-GE3
- 功能描述:
MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
- RoHS:
否
- 制造商:
Vishay Semiconductors
- 晶體管極性:
P-Channel
- 汲極/源極擊穿電壓:
30 V
- 閘/源擊穿電壓:
+/- 20 V
- 漏極連續(xù)電流:
50 A 電阻汲極/源極
- RDS(導(dǎo)通):
5.6 mOhms
- 配置:
Single
- 最大工作溫度:
+ 150 C
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
PowerPAK 1212-8
- 封裝:
Reel
供應(yīng)商
- 企業(yè):
深圳市長旗科技有限公司
- 商鋪:
- 聯(lián)系人:
劉先生
- 手機(jī):
15817260738
- 詢價(jià):
- 電話:
15817260738
- 地址:
福田區(qū)華強(qiáng)北街道佳和大廈A座1518
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