首頁 >STB33N60DM6>規(guī)格書列表

零件型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

STB33N60DM6

絲?。?a target="_blank" title="Marking" href="/33n60dm6/marking.html">33N60DM6；Package：D2PAK；N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D2PAK package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Applications ?Switchingapplications Description Thishigh-voltageN-cha

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB33N60DM6

N溝道600 V、115 mOhm典型值、25 A MDmesh DM6功率MOSFET，D2PAK封裝; ? Fast-recovery body diode \n? Lower RDS(on) per area vs previous generation \n? Low gate charge, input capacitance and resistance \n? 100% avalanche tested \n? Extremely high dv/dt ruggedness \n? Zener-protected;

This high-voltage N-channel Power MOSFET is part of the MDmesh? DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.\n\n

STSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF33N60DM6

N-channel600V,115mtyp.,25A,MDmeshDM6PowerMOSFETinaTO?220FPpackage

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL33N60DM6

N-channel600V,125mtyp.,21A,MDmeshDM6PowerMOSFETinaPowerFLAT8x8HVpackage

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP33N60DM6

N-channel600V,115mtyp.,25A,MDmesh?DM6PowerMOSFETinaTO?220package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected ?High-creepagepackage Description Thishigh-voltageN-channelPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

技術(shù)參數(shù)

  • Package：

    D2PAK

  • Grade：

    Industrial

  • VDSS(V)：

    600

  • RDS(on)_max(@ VGS=10V)(Ω)：

    0.128

  • Drain Current (Dc)_max(A)：

    25

  • PTOT_max(W)：

    190

  • Qg_typ(nC)：

    35

  • Features：

    Fast recovery diode

  • Reverse Recovery Time_typ(ns)：

    115

  • Qrr_typ(nC)：

    520

  • Peak Reverse Current_nom(A)：

    9

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ST(意法半導(dǎo)體)
24+
TO-263
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
ST
284
只做正品
 詢價(jià)
ST/意法半導(dǎo)體
25+
原廠封裝
10280
原廠授權(quán)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源！
 詢價(jià)
ST/意法半導(dǎo)體
25+
原廠封裝
9999
詢價(jià)
ST/意法
2511
D2PAK
360000
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
 詢價(jià)
ST/意法半導(dǎo)體
25+
原廠封裝
10280
詢價(jià)
STM
18+
TO263
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價(jià)
STMicroelectronics
21+
D2PAK
1000
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營)!
 詢價(jià)
STM
1809+
TO-263
375
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持
 詢價(jià)
更多STB33N60DM6供應(yīng)商 更新時(shí)間2025-7-28 16:12:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多