| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：5N1；WE-KI SMT Wire Wound Ceramic Inductor GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging) | WURTHWurth Elektronik GmbH & Co. KG, Germany. 伍爾特伍爾特集團(tuán) | WURTH | ||
Marking：5N10L110；Package：PG-TDSON-8-33；OptiMOS?-5 Power Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel-Enhancementmode-LogicLevel ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ?100Avalanchetested | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N1L094D；Package：PG-TDSON-8-60；OptiMOSTM 5 Power-Transistor Features ?OptiMOSTMpowerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N1L280D；Package：PG-TDSON-8-61；OptiMOSTM 5 Power-Transistor Features ?OptiMOSTMpowerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–LogicLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N10N016；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS? 5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL2upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N10N017；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS? 5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL2upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%Avalan | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N10014；Package：PG-HSOF-8-1；OptiMOS?-5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–Enhancementmode–NormalLevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?Greenproduct(RoHScompliant) ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N12N017；Package：PG-HSOF-8-1；OptiMOS? 5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%avalan | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N12N018；Package：PG-HSOG-8-1；OptiMOS? 5 Power-Transistor Potentialapplications Generalautomotiveapplications. Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175° | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：5N12N018；Package：PG-HDSOP-16-1；OptiMOS? 5 Power-Transistor Features ?OptiMOS?powerMOSFETforautomotiveapplications ?N-channel–enhancementmode–normallevel ?ExtendedqualificationbeyondAEC-Q101 ?Enhancedelectricaltesting ?Robustdesign ?MSL1upto260°Cpeakreflow ?175°Coperatingtemperature ?RoHScompliant ?100%avalan | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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