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ISL91110IINZ-T

Marking：110N；Package：25BallWLCSP；High Efficiency Buck-Boost Regulator with 4.5A Switches

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL91110IINZ-T7A

Marking：110N；Package：25BallWLCSP；High Efficiency Buck-Boost Regulator with 4.5A Switches

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BSC110N15NS5SC

Marking：110N15SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 150 V

Features ?Dual-sidecooledpackagewithlowestJunction-topthermalresistance ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB110N20N3LF

Marking：110N20LF；Package：PG-TO263-3；OptiMOSTM 3 Linear FET, 200 V

Features ?Idealforhot-swapande-fuseapplications ?Verylowon-resistanceRDS(on) ?WidesafeoperatingareaSOA ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Halogen-freeaccordingtoIEC6

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC110N12NM6

Marking：110N12N6；Package：PG-TDSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

RM110N100BT2

Marking：110N100；Package：TO-220；N-Channel Trench MOSFET

Features Advancedtrenchcelldesign LowThermalResistance VDSS≥100VRDS(ON)≦4.1mΩ@VGS=10V

RECTRON

Rectron Semiconductor

RM110N150T2

Marking：110N150；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description TheRM110N150T2usesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealforhigh

RECTRON

Rectron Semiconductor

RM110N82T2

Marking：110N82；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description TheRM110N82T2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=82V,ID=110A RDS(ON)

RECTRON

Rectron Semiconductor

RM110N90DF

Marking：110N90；Package：DFN5x6；N-Channel Trench MOSFET

Features HighEfficiency LowDenseCellDesign VDSS≥90V RDS(ON)≦4.7mΩ@VGS=10V improveddv/dtcapability ReliableandRugged Application Halogen-free Networking,LoadSwtich LEDlighting,QuickCharger

RECTRON

Rectron Semiconductor

STH110N7F6-2

Marking：110N7F6；Package：H2PAK-2；N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET? F6 Power MOSFET in a H2PAK-2 package

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET?F6technology withanewtrenchgatestructure.Th

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    110N

  • 制造商：

    Panasonic Industrial Company

  • 功能描述：

    ADAPTER

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24+
8866
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NEC
24+
SOT-263
5000
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25+23+
1206
28515
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ST
20+
TO-220
38560
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22+
1206
20000
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ST/意法
23+
TO-220
50000
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ST
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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INFINEON/英飛凌
24+
TO-251A
8999
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GOFORD
2022+
TO-220
50000
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HARVATEK
23+
1206
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道。可提供大量庫(kù)存,詳
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更多110N供應(yīng)商 更新時(shí)間2025-6-26 16:30:00

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